Microsensors for magnetic fields

MEMS: A Practical Guide of Design, Analysis, and Applications

Volumn , Issue , 2006, Pages 453-521

  Roumenin, Chavdar ^a  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34247561688     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-3-540-33655-6_9     Document Type: Chapter

References (104)

1. S. Middelhoek and S.A. Audet, Silicon Sensors, Academic Press, London, UK (1989)
2. R. Boll and KJ. Overshott (eds.), Magnetic Sensors, in Sensors, A Comprehensive Survey , vol. 5, VCH, Weinheim, Germany (1989)
3. S.H. Sze, Semiconductor Sensors, Wiley, New York (1994)
4. C.S. Roumenin , Solid State Magnetic Sensors , Elsevier, Amsterdam, The Netherlands (1994)
5. J.E. Brignell and N. White, Intelligent Sensors Systems , lOP Publishing, Bristol, UK (1994)
6. R.S. Popovic, Hall Effect Devices, Adam Hilger, Bristol, UK (1991)
7. C. Roumenin, & quot;Functional magnetic-field microsensors: An overview," Sensors and Materials , 5(5):285 (1994)
8. S. Middelhoek, A.A. Bellekom, U. Dauderstadt, PJ. French, S.R. in t'Hout, W. Kindt, F. Riedijk, and MJ. Vellekoop, & quot;Silicon sensors," Meas. Sci. Technol., 6:1641 (1995)
9. C.S. Roumenin, & quot;Magnetic sensors continue to advance toward perfection," Sensors and Actuators, A46-47:273 (1995)
10. W.H. Ko, & quot;The future of sensor and actuator system," Sensors and Actuators, A56: 193 (1996)
11. II. H. Baltes, & quot;Future of IC microtransducers," Sensors and Actuators, A56: 179 (1996)
12. H. Fujita, & quot;Future of actuators and microsystems," Sensors and Actuators, A56:105 (1996)
13. R.S. Popovic , J.A. Flanagan, and P.A Besse, & quot;The future of magnetic sensors," Sensors and Actuators, A56:39 (1996)
14. K. Mohri, T. Uchiyama, and L.Y. Panina, & quot;Recent advances of micro magnetic sensors and sensing application," Sensors and Actuators, A59:1 (1997)
15. H.N. Norton, Sensor and Transducer-Selection Guide, Elsevier, Oxford, UK (1992)
16. H.J. Gray and A Isaacs (eds.), Dictionary of Physics, 3rd ed., Longman Ltd., London, UK (1990)
17. E.H. Hall, & quot;On a new action of the magnet on electric current," Am. J. Math., 2:287 (1879)
18. E.H. Putley, The Hall Effect and Semiconductor Physics, Dover, New York (1960)
19. AS. Grove, Physics and Technology of Semiconductor Devices, Wiley, New York (1967)
20. R. Mueller, Grundlagen der Halbleiter-Elektronik, Springer Verlag, Berlin (1971)
21. C.S. Roumenin, & quot;Hall effect in diode structures," Compt. Rendus ABS, 38(11):150I (1985
22. Optimized emitter-injection modulation magnetotransistor," Sensors and Actuators, 6:19 (1984)
23. C.S. Roumenin, A Ivanov, and P. Nikolova, & quot;A new class of multisensors for magnetic field and temperature based on the diode Hall effect," Sensors and Actuators, A85:163 (2000); & quot;The diode Hall effect and its sensor applications-An overview," Sensors and Materials , 13(1): I (2001)
24. A Nathan, K. Maenaka,W Allegretto , H. Baltes, and T. Nakamura, & quot;The Hall effect in integrated magnetotransistors," IEEE Trans. Electron. Devices, ED36( 1):108 (1989)
25. R.E Wick, & quot;Solution of the field problem of the germanium gyrator," J. Appl. Phys., 25(6): 741 (1954)
26. W Versnel, & quot;Analysis of a circular Hall plate with equal finite contacts," Solid-State Electron., 24:63 (1981)
27. M. Oszwaldowski, & quot;Hall sensors based on heavily doped n-InSb thin films," Sensors and Actuators, A68:234 (1998)
28. R.C. Gallagher and WS. Corak, & quot;A metal-oxide-semiconductor (MaS) Hall element," Solid-State Electron., 9:571 (1966)
29. J. Lau, C. Nguyen, P.K. Ko, and P.C.H. Chan, & quot;Minimum detectable signals of integrated magnetic sensors in bulk CMOS and SOl technologies for magnetic read heads," in Proc. 8th Intern. Con on Solid-State Sensors and Actuators, and Eurosensors IX, Stockholm, Sweden (1995), p. 257
30. S. Kawahito , K. Hayakava, Y. Matsumoto, M. Ishida, and Y. Tadokoro, & quot;An integrated MaS magnetic sensor with chopper-stabilized amplifier," Sensors and Materials, 8(1):1 (1996)
31. D. Killat, J. v. Kluge, E Umbach, W Langheinrich, and R. Schmitz, & quot;Measurement and modelling of sensitivity and noise of MOS magnetic field-effect transistors," Sensors and Actuators, A61:346 (1997)
32. & quot;Improved Hall devices find new uses: orthogonal coupling yields sensitive products with reduced voltage offset and low drift," Electron. Week, 29:59 (April 1985)
33. Y. Sugiyama, H. Soga, and M. Tacano, & quot;Highly-sensitive Hall element with quantum-well superlattice structures," J. Crystal Growth, 95:394 (1989)
34. M. Behet, J. de Boeck, G. Borghs, and P. Mijlemans, & quot;Comparative study on the performance of InAs/Alo.zGao.gSb quantum well Hall sensors on germanium and GaAs substrates," Sensors and Actuators, A79: 175 (2000)
35. M. Behet, A. Bekaert, J. de Boeck, and G. Borghs, & quot;InAs/AlozGaogSb quantum well Hall effect sensors," Sensors and Actuators, A81: 13 (2000)
36. C.S. Roumenin and P.T. Kostov, & quot;Planar Hall-effect device," Bulgarian Patent no. 37208, December 26, 1983
37. C.S. Roumenin, & quot;Parallel-field Hall microsensors: an overview," Sensors and Actuators, A30:77 (1992)
38. R.S. Popovic, 'T he vertical Hall-effect device," IEEE Electron. Device Lett., EDL-5:357 (1984)
39. K. Maenaka, T. Ohgusu, M. Ishida, and T. Nakamura, & quot;Novel vertical Hall cells in standard bipolar technology," Electron. Lett , 23:1104 (1987)
40. E. Schurig, M. Demierre, C. Schott, and R.S. Popovic, & quot;A vertical Hall device in CMOS high-voltage technology," Sensors and Actuators, A97-98:47 (2002)
41. C.S. Roumenin and P.T. Kostov, & quot;Optimized parallel-field Hall microsensor,' Compt. Rendus ABS, 40:51 (1987)
42. S.R. in't Hout and S. Middelhoek, & quot;A 400°C silicon Hall sensor," Sensors and Actuators, A60: 14 (1997)
43. R.S. Popovic, & quot;Not-plate-like Hall magnetic sensors and their applications," Sensors and Actuators, A85:9 (2000)
44. C.S. Roumenin, D. Nikolov, and A. Ivanov, & quot;Enhancing the sensitivity of Hall microsensor by minority carrier injection," Electron. Lett., 36:1375 (2000)
45. R.A. Smith, Semiconductors, 2nd edition, Cambridge Univ. Press , Cambridge, UK (1977)
46. H. Weiss, Structures and Application of Galvanomagnetic Devices, Pergamon, Oxford, UK (1969)
47. S. Kataoka, & quot;Recent developments of magnetoresistive devices and applications," Circulars Electrotech. Lab., no. 182, Electrotech. Lab., Tokyo, Japan (1974)
48. Sensoren, Magnetfeldhalbleiter, Teil I, Siemens AG Aktiengesellschaft, Munchen, Germany (1997)
49. M.N. Balbich, J.M. Broto, A. Fert, F. Nguyen Van Dau, F. Petroff, P. Etienne, G. Creuzet, A. Friederich, and J. Chazelas, & quot;Giant magnetoresistance of (OOl)Fe/(OOI)Cr magnetic superlattices,' Phys. Rev. Lett., 61:2472 (1988)
50. K.-M.H. Lenssen, DJ. Adelerhof, HJ. Gassen, A.E.T. Kuiper, G.H.J. Somers, and J.B A.D. van Zon, & quot;Robust giant magnetoresistance sensors," Sensors and Actuators, A85:85 (2000)
51. http://www.semiconductors.philips.com/discretes
52. http://www.nve.com
53. A. Barthelemy, A. Fert, and F. Petroff, Handbook ofMagnetic Materials, vol. 12 (K.HJ. Buschow, ed.), Elsevier, Amsterdam, The Netherlands (1999), Chap. I
54. H. Pfleiderer, & quot;Magnetodiode model," Solid-State Electron., 15:335 (1972)
55. E.A. Karakushan and Vl. Stafeev, & quot;Magnetodiodes," Sov. Phys.-Solide State, 3:493 (1961)
56. S. Cristoloveanu, & quot;L' effet magnetodiode et son application aux capteurs magnetiques de haute sensibilite," L'Onde Electrique, 59:68 (1979)
57. A. Chovet, S. Cristoloveanu, A. Mohaghegh, and A. Dandache, & quot;Noise limitation of magnetodiodes," Sensors and Actuators, 4: 174 (1983)
58. O.S. Lutes, P.S. Nussbaum, and O.S. Aadland, & quot;Sensitivity limits in SOS magnetodiodes," IEEE Trans. Electron. Devices , ED-27:2156 (1980)
59. C.S. Roumenin, & quot;2-D magnetodiode sensors based on SOS technology," Sensors and Actuators, A54:584 (1996)
60. A.W. Vinal and N.A. Masnari, & quot;Operating principles of bipolar transistor magnetic sensors," IEEE Trans. Electron. Devices, ED-31:1486 (1984)
61. C.S. Roumenin, & quot;Bipolar magnetotransistor sensors: an invited review," Sensors and Actuators , A24:83 (1990)
62. R. Castagnetti, M. Schneider, and H. Baltes, & quot;Micromachined magnetotransistors ," Sensors and Actuators, A46-47:280 (1995)
63. Y.A. Chaplygin, A.A. Galushkov, LM. Romanov, and S.A. Volkov, & quot;Experimental research on the sensitivity and noise level of bipolar and CMOS integrated magnetotransistors and judgment of their applicability in weak-field magnetometers," Sensors and Actuators, A49:163 (1995)
64. R. Castagnetti, Integrated Magnetotransistors in Bipolar and CMOS Technology, Phys. Electr. Lab., Zurich, Switzerland (1994), ETH-Hoenggerberg, HPT, ISBN 3-907574-05-2
65. C. Riccobene, Multidimensional Analysis of Galvanomagnetic Effects in Magnetotransistors, Phys. Electr. Lab., Zurich, Switzerland (1995), ETHHoenggerberg, HPT, ISBN 3-907574-08-7
66. Uk-Song Kang, Seung-Ki Lee, and Min-Koo Han, & quot;Highly sensitive magnetotransistor with combined phenomena of Hall effect and emitter injection modulation operated in the saruration mode," Sensors and Actuators, A54:641 (1996)
67. A. Nagy and H. Trujillo , & quot;Highly sensitive magnetotransistor with new topology," Sensors and Actuators, A65:97 (1998)
68. B. Gilbert , & quot;Novel magnetic field sensors using carrier domain rotation : proposed device design," Electron. Lett , 12:698 (1976)
69. J.A. Goicolea, R.S. Muller, and A.E. Smith, & quot;Highly sensitive silicon carrier domain magnetometer," Sensors and Actuators, 5:174 (1984)
70. G. Persky and DJ. Bartelink, & quot;Controlled current fillaments in PNIPN structures with application to magnetic field detection," Bell Syst. Tech. J., 53:467 (1974)
71. C.S. Roumenin and V. Dobovska, & quot;Circul ar magnetometer, & quot; Sensors and Actuators, A32:661 (1992)
72. D.L. Polla, R.S. Muller, and R.M. White, & quot;Integrated multisensor chip," IEEE Electron. Device Lett., EDL-7:254 (1986)
73. C. Roumenin , P. Nikolova , and A. Ivanov, & quot;Magnetotransistor sensors with amperometric output," Sensors and Actuators, A69: 16 (1998)
74. C.S. Roumenin, A. Ivanov, and P. Nikolova , & quot;A linear multisensor for temperature and magnetic field based on diode structure," Sensors and Actuators, A72:27 (1999)
75. C.S. Roumenin, A. Ivanov, and P. Nikolova, & quot;A new anisotropy effect in the amperometric magnetic-field microsensors," Sensors and Actuators, A77: 195 (1999)
76. C.S. Roumenin, & quot;Magnetogradient effect in differential bipolar magnetotransistors," Compt. Rendus ABS, 42(12):63 (1989)
77. C.S. Roumenin, & quot;Three-dimensional magnetic field vector sensor," Compt. Rendus ABS, 41(1) :59 (1988)
78. C.S. Roumenin, K. Dimitrov, and A. Ivanov, & quot;Novel integrated 3-D silicon Hall magnetometer," in Proc. 14th Europ. Confer. on Solid-State Transducers-Eurosensors XIX, Copenhagen, Denmark (2000), p. 759
79. M. Paranjape, L.M. Landsberger, and M. Kahrizi , & quot;A CMOS-compatible 2-D vertical Hall magnetic-field sensor using active carrier confinement and postprocess micromachining," Sensors and Actuators, A53:278 (1996)
80. M. Paranjape and I. Filanovsky, & quot;A 3-D vertical Hall magnetic field sensor in CMOS technology," Sensors and Actuators, A34:9 (1992)
81. L. Zongsheng, W. Tianping, and W. Guangli, & quot;A new integrated JFET 3-D magnetic-field sensor in VIP technology," Sensors and Actuators, A35:213 (1993)
82. Lj. Ristic and M. Paranjape, & quot;Hall devices for multidimensional sensing of magnetic field," Sensors and Materials, 5:301 (1994)
83. K. Maenaka, Y. Shimizu, M. Baba, and M. Maeda, & quot;Application of multidimensional magnetic sensors-position and movement detection," Sensors and Materials, 8:33 (1996)
84. H. Lin, T. Lei, Jz-Jan Jeng, Ci-Ling Pan, and C. Chang, & quot;A novel structure for three-dimensional silicon magnetic transducers to improve the sensitivity symmetry," Sensors and Actuators, A56:233 (1996)
85. A. Nagy and H. Trujillo, & quot;3D magnetic-field sensor using only a pair of terminals, & quot; Sensors and Actuators, A58:137 (1997)
86. Ch. Schott, D. Manic , and R.S. Popovic, & quot;Microsystem for high-Accuracy 3D magnetic-field measurements," Sensors and Actuators, A67:133 (1998)
87. K. Maenaka and M. Maeda, & quot;Interface electronics for integrated magnetic sensors," Sensors and Materials, 5:265 (1994)
88. F. Ning and E. Bruun, & quot;An offset-trimmable array of magnetic-field-sensitive MOS transistors (MAGFETs)," Sensors and Actuators, A58:109 (1997)
89. S. Kirby, & quot;Temperature compensation technique for the carrier domain magnetometer," Sensors and Actuators, 3:373 (1983)
90. P. Munter, Spinning-Current Method for Offset Reduction in Silicon Hall Plates, Delft Univ. Press, Delft, The Netherlands (1992), ISBN 90-6275-7804/CIP
91. S. Bellekom, Origin of Offset in Conventional and Spinning-Current Hall Plates, Delft Univ. Press, Delft, The Netherlands (1998), ISBN 90-407-17222/CIP
92. R. Steiner, C. Maier, A. Haberli, F.-P. Steiner, and H. Baltes, & quot;Offset reduction in Hall devices by continuous spinning current method," Sensors and Actuators, A66:167 (1998)
93. S. Bellekom and P.M. Sarro, & quot;Offset reduction of Hall plates in three different crystal planes," Sensors and Actuators, A66:23 (1998)
94. S. Bellekom, & quot;CMOS versus bipolar Hall plates regarding offset correction," Sensors and Actuators, A76:178 (1999)
95. C. Muller-Schwanneke, F. lost, K. Marx, S. Lindenkreuz, and K. von Klitzing, & quot;Offset reduction in silicon Hall sensors, & quot; Sensors and Actuators, A81:18 (2000)
96. H. Blanchard, C. de Raad Iseli, and R.S. Popovic, & quot;Compensation of the temperature-dependent offset of a Hall sensor," Sensors and Actuators , A60:10 (1997)
97. Y. Kanda and Migitaka, & quot;Effect of mechanical stress on the offset voltage of Hall devices in Si IC," Phys. Status Solidi (A), 35: 115 (1976)
98. R. Steiner, C. Maier, M. Mayer, S. Bellekom, and H. Baltes , & quot;Influence of mechanical stress on the offset voltage of Hall devices operated with spinning current method," J. Microelectromech. Syst., 8(4):466 (1999)
99. R.S. Vanha, Rotary Switch and Current Monitor by Hall-Based Microsystems, Phys. Electr. Lab., ETH Zurich, Switzerland (1999), ISBN 3-89649446-5
100. S. Kordic, V. Zieren, and S. Middelhoek, & quot;A novel method for reducing the offset of magnetic-field sensors," Sensors and Actuators, 4:55 (1983)
101. P.L. Simon, P.H.S. Vries, and S. Middelhoek, & quot;Autocalibration of silicon Hall devices ," in Proc. 8th Intern. Con on Solid-State Sensors and Actuators, and Eurosensors IX, Stockholm, Sweden (1995), p. 237
102. C.S. Roumenin, & quot;New magnetomodulating systems for contactless measurement of linear displacements," Compt. Rendus ABS, 41(4):25 (1988)
103. S. Hentschke, & quot;Digital stochastic magnetic-field detection," Sensors and Actuators, A57:1 (1996)
104. P. Ripka , Magnetic Sensors and Magnetometers, Artech House Books , London, UK (200 I)