Compensation of the temperature-dependent offset drift of a Hall sensor

Sensors and Actuators, A: Physical

Volumn 60, Issue 1-3, 1997, Pages 10-13

  Blanchard, Hubert ^a   De Raad Iseli, Christina ^a,b,c   Popovic, Rade S ^a,d,e  

^a EPFL   (Switzerland)

^b HITACHI LTD   (Japan)

^c Smart Silicon Systems SA   (Switzerland)

^d Elektronska Industrija Corp

^e Landis and Gyr Communications Corp   (Switzerland)

Author keywords

Hall sensors; Offset compensation; Temperature dependent drift

Indexed keywords

CALIBRATION; HALL EFFECT DEVICES; MAGNETIC FIELDS; TEMPERATURE; THERMAL EFFECTS;

HALL SENSOR; OFFSET COMPENSATION; TEMPERATURE DEPENDENT DRIFT;

SENSORS;

EID: 0031145708     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(96)01411-2     Document Type: Article

References (5)

1. J.T. Maupin and M.L. Geske, The Hall effect in silicon circuits, in C.L. Chien and C.R. Westgate (eds.), The Hall Effect and its Applications, Plenum, New York, 1980, pp. 421-445.
2. P. Munter, Spinning-current method for offset reduction in silicon Hall plates, Thesis, Delft University Press, 1992.
3. F. Kuhrt, Siemens Z., 28 370.
4. B. Hälg and R.S. Popovic, How to liberate integrated sensors from encapsulation stress, Sensors and Actuators, A21-A23 (1990) 908-910.
5. R.S. Popovic, The vertical Hall-effect device, IEEE Electron Device Lett., EDL-5 (1984) 3578.