A CMOS-compatible 2-D vertical Hall magnetic-field sensor using active carrier confinement and post-process micromachining

Sensors and Actuators, A: Physical

Volumn 53, Issue 1-3, 1996, Pages 278-283

  Paranjape, M ^a,c   Landsberger, L M ^b   Kahrizi, Mojtaba ^b  

^a Lawrence Berkeley National Laboratory   (United States)

^b Gina Cody School of Engineering and Computer Science   (Canada)

^c ITC IRST   (Italy)

Author keywords

Carrier confinement; CMOS; Hall devices; Magnetic field sensors; Micromachining

Indexed keywords

EID: 0038407863     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/0924-4247(96)01160-0     Document Type: Article

References (17)

1. H.P. Baltes and R.S. Popovic, Integrated semiconductor magnetic field sensors, Proc. IEEE, 74 (1986) 1107-1132.
2. V. Zieren and B.P.M. Duyndam, Magnetic field sensitive multicollector n-p-n transistors, IEEE Trans. Electron Devices, ED-29 (1982) 83-90.
3. S. Kordic, Integrated 3-D magnetic sensor based on an n-p-n transistor, IEEE Trans. Electron Device Lett., EDL-7 (1986) 196-198.
4. E.A. Vittoz, MOS transistors operated in the lateral bipolar mode and their application in CMOS technology, IEEE J. Solid State Circuits, SC-18 (1983) 173-179.
5. K.O. Kenneth, R. Reif and H.-S. Lee, BiMOS transistors: merged bipolar/sidewall MOS transistors, IEEE Trans. Electron Device Lett., EDL-10 (1989) 517-519.
6. R.S. Popovic, The vertical Hall effect device, IEEE Electron Device Lett., EDL-5 (1984) 357-358.
7. M. Parameswaran, H.P. Baltes, Lj. Ristic, A.C. Dhaded and A.M. Robinson, A new approach for the fabrication of micromechanical structures, Sensors and Actuators, 19 (1989) 289-307.
8. I. Shibasaki, Y. Kanayama, K. Nagase, T. Ito, F. Ichimori, T. Yoshida and K. Harada, High sensitive thin film InAs Hall element by MBE, Tech. Digest, 6th Int. Conf. Solid-State Sensors and Actuators (Transducers '91), San Francisco, CA, USA, 24-28 June, 1991, pp. 1069-1072.
9. S. Kawahito, Y. Sasaki, M. Ashiki and T. Nakamura, Micromachined solenoids for highly sensitive magnetic sensors, Tech. Digest, 6th Int. Conf. Solid-State Sensors and Actuators (Transducers '91), San Francisco, CA, USA, 24-28 June, 1991, pp. 1077-1080.
10. Lj. Ristic, M. Paranjape and M. Doan, 2-D magnetic field sensor based on a vertical Hall device, Tech. Digest, Solid-State Sensors and Actuators Workshop, Hilton Head, SC, USA, 1990, pp. 111-113.
11. M. Paranjape and Lj. Ristic, Multi-dimensional detection of magnetic fields using CMOS integrated sensors, IEEE Trans. Magn., 27 (Nov.) (1991) 4843-4845.
12. M. Paranjape, Lj. Ristic and I. Filanovsky, A 3-D vertical Hall magnetic field sensor in CMOS technology, Sensors and Actuators A, 34 (1992) 9-14.
13. M. Paranjape and Lj. Ristic, A micromachined vertical Hall magnetic field sensor in standard CMOS technology, Appl. Phys. Lett., 60 (1992) 3188-3190.
14. M. Paranjape, Lj. Ristic and I. Filanovsky, An integrated micromachined magnetic field sensor with on-chip support circuitry using standard technology processing, Appl. Phys. Lett., 64 (1994) 1576-1578.
15. K. Petersen, Silicon as a mechanical material, Proc. IEEE, 70 (1982) 420-457.
16. A. Reismann, M. Berkenblit, S.A. Chan, F.B. Kaufmann and D.C. Green, The controlled etching of silicon in catalyzed ethylenediamine-pyrocatechol-water solutions, J. Electrochem. Soc., 126 (1979) 1406-1415.
17. Lj. Ristic, T.Q. Truong, M.T. Doan, D. Mladenovic and H.P. Baltes, Influence of surface effects on the sensitivity of magnetic field sensors, Can. J. Phys., 67 (1989) 207-211.