Hall sensors based on heavily doped n-InSb thin films

Sensors and Actuators, A: Physical

Volumn 68, Issue 1-3, 1998, Pages 234-237

  Oszwałdowski, Maciej ^a  

^a POZNAN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Hall sensors; InSb

Indexed keywords

ELECTRON ENERGY LEVELS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; MAGNETIC FIELDS; SEMICONDUCTOR DOPING; TEMPERATURE; THIN FILMS;

BRILLOUIN ZONE; ELECTRON MOBILITY; HALL SENSORS;

SENSORS;

EID: 0032098760     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0924-4247(97)01779-2     Document Type: Article

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