InAs/Al0.2Ga0.8Sb quantum well Hall effect sensors

Sensors and Actuators, A: Physical

Volumn 81, Issue 1, 2000, Pages 13-17

  Behet, M ^a   Bekaert, J ^b   De Boeck, J ^a   Borghs, G ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; HALL EFFECT DEVICES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMODYNAMIC STABILITY;

HALL EFFECT SENSORS;

SENSORS;

EID: 0033908603     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00162-4     Document Type: Article

References (4)

1. 0.75As/GaAs quantum well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD, Sens. Actuators, A 57 (1996) 183-185.
2. C.R. Bolognesi, H. Kroemer, J.H. English, Well-width dependence of electron transport in molecular-beam epitaxially grown InAs/AlSb quantum wells, J. Vac. Sci. Technol. B 10 (1992) 877.
3. 0.8Sb heterostructures for magnetic sensing applications, Semicond. Sci. Technol. 13 (1998) 428-432.
4. N. Kuze, K. Nagase, S. Muramatsu, S. Miya, T. Iwabuchi, A. Ichii, I. Shibasaki, InAs deep quantum well structures and their application to Hall elements, J. Cryst. Growth 150 (1995) 1307-1312.