Comparative study on the performance of InAs/Al0.2Ga0.8Sb quantum well Hall sensors on germanium and GaAs substrates

Sensors and Actuators, A: Physical

Volumn 79, Issue 3, 2000, Pages 175-178

  Behet, M ^a   De Boeck, J ^a   Borghs, G ^a   Mijlemans, P ^b  

^a IMEC   (Belgium)

^b Union Miniere Research   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMODYNAMIC STABILITY;

HALL SENSORS;

SENSORS;

EID: 0033895946     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00233-2     Document Type: Article

References (4)

1. 0.75As/GaAs quantum well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD. Sensors and Actuators A. 57:1996;183.
2. Bolognesi C.R., Kroemer H., English J.H. Well-width dependence of electron transport in molecular beam epitaxially grown InAs/AlSb quantum wells. J. Vac. Sci. Technol., B. 10:1992;877.
3. 0.8Sb heterostructures for magnetic sensing applications. Semicond. Sci. Technol. 13:1998;428.
4. Kuze N., Nagase K., Muramatsu S., Miya S., Iwabuchi T., Ichii A., Shibasaki I. InAs deep quantum well structures and their application to Hall elements. J. Cryst. Growth. 150:1995;1307.