Charge storage in a metal-oxide-semiconductor capacitor containing cobalt nanocrystals

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 268-271

  Zhao, Dengtao ^a   Zhu, Yan ^a   Liu, Jianlin ^a,b  

^a University of California Riverside   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Co; Memory; Nanocrystal; Retention

Indexed keywords

ANNEALING; COBALT; DATA STORAGE EQUIPMENT; ELECTRIC CHARGE; ELECTRON TUNNELING; FABRICATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; OPTIMIZATION; ULTRATHIN FILMS;

ANNEALING TEMPERATURE; RETENTION;

MOS CAPACITORS;

EID: 32344446332     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.12.015     Document Type: Article

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