Silicon dioxide passivation of AlGaN/GaN HEMTs for high breakdown voltage

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Ha, Min Woo ^a   Lee, Seung Chul ^a   Park, Joong Hyun ^a   Her, Jin Cherl ^a   Seo, Kwang Seok ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; LEAKAGE CURRENTS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; THRESHOLD VOLTAGE;

ELECTRON INJECTIONS; SURFACE TRAPS; TWO DIMENSIONAL ELECTRON GAS (2DEG) CHARGE; VOLTAGE SWITCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34247523349     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

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