Low temperature growth of amorphous and polycrystalline silicon films from a modified inductively coupled plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3714-3720

  Goto, Masashi ^a   Toyoda, Hirotaka ^a   Kitagawa, Masatoshi ^b   Hirao, Takashi ^c   Sugai, Hideo ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c Matsushita Technoresearch Inc   (Japan)

Author keywords

Hydrogenated amorphous silicon; Inductively coupled plasma; Low temperature growth; Microcrystalline silicon; Photoconductivity; Polycrystalline silicon; Radical diagnostics

Indexed keywords

HIGH DENSITY SILANE PLASMA; LOW TEMPERATURE GROWTH; MODIFIED INDUCTIVELY COUPLED PLASMA; RADICAL DIAGNOSTICS;

AMORPHOUS SILICON; DEPOSITION; LOW TEMPERATURE EFFECTS; MASS SPECTROMETRY; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS; PLASMA DENSITY; PLASMA DIAGNOSTICS; POLYCRYSTALLINE MATERIALS; REACTION KINETICS; SEMICONDUCTING SILICON; X RAY DIFFRACTION ANALYSIS;

FILM GROWTH;

EID: 0031167545     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3714     Document Type: Article

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