High current operation of GaN power HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 311-314

  Ueda, H ^a   Sugimoto, M ^b   Uesugi, T ^a   Fujishima, O ^a   Kachi, T ^a  

^a Rd Management Section   (Japan)

^b TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM PLATING; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRIC WIRING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SUBSTRATES;

DRAIN CURRENT; GATE WIDTH; PULSE MEASUREMENT; SAPPHIRE SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 27744535789     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. N.-Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, and T. P. Ma, "Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs", IEDM 2001 Tech. Digest, pp589-592, 2001
2. S. Yoshida, J. Li, T. Wada, and H. Takehara, "High-Power AlGaN/GaN HFET with a Lower On-state Resistance and a Higher Switching Time for an Inverter Circuit", ISPSD 2003 Tech. Digest, pp58-61, 2003
3. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, and T. Ogura, "600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter", IEDM 2003 Tech. Digest, pp587-590, 2003.
4. Y. Ando, Y. Okamoto, H. Miyamoto, T. Inoue, and M. Kuzuhara, "10-W/mm AlGaN-GaN HFET With a Field Modulating Plate", IEEE Electron Device Letters, vol.24, No.5, pp289-291, 2003
5. R. Lossy, J. Hilsenbeck, J. Wurfl, K. Kohler, and H. Obloh, "Technology and Performance of AlGaN/GaN HEMTs Fabricated on 2-Inch Epitaxy for Microwave Power Applications", Proc. Int. Workshop on Nitride Semiconductors, pp942-945, 2000