High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance

Semiconductor Science and Technology

Volumn 22, Issue 5, 2007, Pages 517-521

  Choi, Y C ^a   Pophristic, M ^b   Peres, B ^b   Cha, H Y ^c   Spencer, M G ^a   Eastman, L F ^a  

^a School of Operations Research and Industrial Engineering   (United States)

^b Velox Semiconductor Corporation   (United States)

^c GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HETEROJUNCTIONS;

BUFFERS; HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 34247466988     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/5/010     Document Type: Article

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