Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy

Semiconductor Science and Technology

Volumn 13, Issue 1, 1998, Pages 71-74

  Ber, B Ya ^a   Kudriavtsev, Yu A ^a   Merkulov, A V ^a   Novikov, S V ^a   Lacklison, D E ^b   Orton, J W ^b   Cheng, T S ^b   Foxon, C T ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011468272     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/1/010     Document Type: Article

References (10)

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9. Foxon C T, Cheng T S, Novikov S V, Lacklison D E, Jenkins L C, Johnston D, Orton J W, Hooper S E, Baba-Ali N, Tansley T L and Tret'yakov V V 1995 J. Crystal Growth 150 892
10. Cheng T S, Foxon C T, Jenkins L C, Hooper S E, Lacklison D E, Orton J W, Ber B Ya, Merkulov A V and Novikov SV 1996 Semicond. Sci. Technol. 11 538