Effect of ohmic contacts on buffer leakage of GaN transistors

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 529-531

  Dora, Yuvaraj ^a   Chakraborty, A ^a   Heikman, S ^a   McCarthy, L ^a   Keller, S ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

Breakdown voltage; Buffer leakage; Field effect transistor (FET); GaN; High electron mobility transistor (HEMT); Ohmic contact; Semi insulating buffer

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON GAS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; OHMIC CONTACTS; SEMICONDUCTOR DOPING;

BUFFER LEAKAGE; GALLIUM NITRIDE TRANSISTORS; SEMI-INSULATING BUFFER;

TRANSISTORS;

EID: 33745669149     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.876306     Document Type: Article

References (7)

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