Arsenic-doped GaN grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 219, Issue 4, 2000, Pages 327-334

  Foxon, C T ^a   Novikov, S V ^a   Cheng, T S ^a   Davis, C S ^a   Campion, R P ^a   Winser, A J ^a   Harrison, I ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034325366     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00661-8     Document Type: Article

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