Microstructure and properties of sol-gel derived Pb(Zr0.3Ti 0.7)O3 thin films on GaN/sapphire for nanoelectromechanical systems

Journal of Sol-Gel Science and Technology

Volumn 42, Issue 3, 2007, Pages 389-395

  Cao, Wei ^a   Dey, Sandwip K ^a  

^a Arizona State University   (United States)

Author keywords

Ferroelectric; GaN; Pb(Zr0.3Ti0.7)O3; Sol gel; Thin film

Indexed keywords

CRYSTAL MICROSTRUCTURE; GALLIUM NITRIDE; LEAD COMPOUNDS; NEMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SOL-GEL PROCESS; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURE; CROSS-SECTIONAL FIELD-EMISSION SEM; CRYSTALLINITY; SAPPHIRE SUBSTRATES;

THIN FILMS;

EID: 34247323474     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-006-0650-3     Document Type: Article

References (39)

1. Scott JF, Paz de Araujo CA (1989) Science 246:1400
2. Dey SK, Zuleeg R (1990) Ferroelectrics 108:37
3. Wang QM, Cross LE (1999) J Am Ceram Soc 82:103
4. Muralt P (2000) IEEE Trans Ultrason Ferroelectr Freq Control 47:903
5. Ekinci KL, Roukes ML (2005) Rev Sci Instrum 76:061101
6. Weitekamp DP, Lambert B (2004) United States Patent, US 6,835,926 B2
7. Masuda A, Morita S, Shigeno H, Morimoto A, Shimizu T, Wu J, Yaguchi H, Onabe K (1998) J Cryst Growth 190:227
8. Ishiwara H (2000) In: Francombe MH (ed) Handbook of thin film devices, vol. 5. Academic Press, San Diego, p. 79
9. Li WP, Zhang R, Zhou YG, Yin J, Bu HM, Luo ZY, Shen B, Shi Y, Jiang RL, Gu SL, Liu ZG, Zheng YD, Huang ZC (1999) Appl Phys Lett 75:2416
10. Dey SK, Budd KD, Payne DA (1988) IEEE Trans Ultrason Ferroelectr Freq Control 35:80
11. Teowee G, Boulton JM, Hassan S, McCarthy K, McCarthy F, Bukowski TJ, Alexander TP, Uhlmann DR (1997) Integr Ferroelectr 18:287
12. Cross JS, Fujiki M, Sakai T, Tsukada M, Kamehara N (1999) In: Electroceramics In Japan I; vol. 157-1, p 181
13. Neurgaonkar RR, Santha IS, Oliver JR, Nelson JG, Cheung JT, Morgan PED, Udayakumar KR (1993) Mater Res Bull 28:719
14. Coffman PR, Dey SK (1994) J Sol-Gel Sci Technol 1:251
15. Coffman PR, Barlingay CK, Gupta A, Dey SK (1996) J Sol-Gel Sci Technol 6:83
16. Dey SK (1996) In: Araujo CPd, Scott JF, Taylor GW (ed) Ferroelectric thin films: synthesis and basic properties. Gordon and Breach, Amsterdam, p 329
17. Chen J, Udayakumar KR, Brooks KG, Cross LE (1992) J Appl Phys 71:4465
18. Nakamura T, Nakao Y, Kamisawa A, Takasu H (1994) Jpn J Appl Phys Part 1 - Regul Pap Short Notes Rev Pap 33:5207
19. Zhang Q, Ren TL, Zhang LT, Zhu J, Li ZJ (2001) Jpn J Appl Phys Part 1 - Regul Pap Short Notes Rev Pap 40:5074
20. Thompson CV (2000) Annu Rev Mater Sci 30:159
21. Tani T, Xu Z, Payne DA (1993) In: Mayers ER, Tuttle BA, Desu SB, Lansen PK (ed) Ferroelectric Thin Film III. MRS, Pittsburgh, PA, p 269
22. Cao W, Bhaskar S, Li J, Dey SK (2005) Thin Solid Films 484:154
23. Ishida M, Tsuji S, Kimura K, Matsunami H, Tanaka T (1978) J Cryst Growth 45:393
24. Okumura H, Misawa S, Yoshida S (1991) Appl Phys Lett 59:1058
25. Doolittle LR (1985) Nucl Instrum Meth Phys Res Sect B-Beam Interact Mater Atoms 9:344
26. Zhou J, Reddic JE, Sinha M, Ricker WS, Karlinsey J, Yang JW, Khan MA, Chen DA (2002) Appl Surf Sci 202:131
27. Oliver RA, Kappers MJ, Sumner J, Datta R, Humphreys CJ (2006) J Cryst Growth 289:506
28. Carim AH, Tuttle BA, Doughty DH, Martinez SL (1991) J Am Ceram Soc 74:1455
29. Gruverman A, Cao W, Bhaskar S, Dey SK (2004) Appl Phys Lett 84:5153
30. Cheng JR, Meng ZY (2001) Thin Solid Films 385:5
31. Wang ZJ, Chu JR, Maeda R, Kokawa H (2002) Thin Solid Films 416:66
32. Dey SK, Bhaskar S, Goswami J, Cao W (2004) Integr Ferroelectr 60:69
33. Dey SK, Bhaskar S, Tsai MH, Cao W (2004) Integr Ferroelectr 62:69
34. Schroder DK (1998) Semiconductor material and device characterization, 2nd ed. Wiley, New York
35. Johnson RS, Hong JG, Lucovsky G (2001) J Vac Sci Technol B 19:1606
36. Sirenko AA, Bernhard C, Golnik A, Clark AM, Hao JH, Si WD, Xi XX (2000) Nature 404:373
37. Wu SY (1974) IEEE Trans Electron Devices ED21:499
38. Mehta RR, Silverman BD, Jacobs JT (1973) J Appl Phys 44:3379
39. Tagantsev AK, Pawlaczyk CZ, Brooks K, Landivar M, Colla E, Setter N (1995) Integr Ferroelectr 6:309