Structural and electrical properties of Pb(Zr,Ti)O3 thin films on GaN/Sapphire, Ru/Sapphire and Ru/GaN/Sapphire substrates

Integrated Ferroelectrics

Volumn 60, Issue , 2004, Pages 69-78

  Dey, Sandwip K ^a   Bhaskar, S ^a   Goswami, J ^a   Cao, W ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Ferroelectric; GaN; MOCVD; Pb(Zr0.3Ti0.7)O3; Ru; Sol gel

Indexed keywords

DIELECTRIC PROPERTIES; GALLIUM NITRIDE; LEAD COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; RUTHENIUM; SAPPHIRE;

LEAD ZIRCONATE TITANATE; METAL-FERROELECTRIC-SEMICONDUCTOR (MFS); REMNANT POLARIZATION;

THIN FILMS;

EID: 9744247126     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490441674     Document Type: Article

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