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Applied Physics Letters

Volumn 88, Issue 12, 2006, Pages

Characteristics of Hf xSi yO films grown on Si 0.8Ge 0.2 layer by electron-beam evaporation

(5) Cheng, Xinhong a Song, Zhaorui b Yu, Yuehui b Yang, Wenwei c Shen, Dashen d

a WENZHOU UNIVERSITY (China)

b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

c TSINGHUA UNIVERSITY (China)

d UNIVERSITY OF ALABAMA IN HUNTSVILLE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM EVAPORATION; HF XSI YO; INTERFACE PROPERTIES; METAL INSULATOR SEMICONDUCTOR CAPACITORS;

CAPACITORS; ELECTRON BEAMS; EVAPORATION; HAFNIUM ALLOYS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SPECTROSCOPY;

FILM GROWTH;

EID: 33645513984 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2188598 Document Type: Article

Times cited : (6)

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