Improved surface characteristics and contact performance of epitaxial p-AlGaN by a chemical treatment process

Chinese Physics Letters

Volumn 23, Issue 2, 2006, Pages 432-435

  Shao, Jia Ping ^a   Han, Yan Jun ^a   Wang, Lai ^a   Jiang, Yang ^a   Xi, Guang Yi ^a   Li, Hong Tao ^a   Zhao, Wei ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; III-V SEMICONDUCTORS; PHOTOLUMINESCENCE SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL TREATMENTS; COMPARATIVES STUDIES; CONTACT PERFORMANCE; DEEP-LEVELS; SPECIAL SURFACES; SURFACE CHARACTERISTICS; SURFACE CHEMICALS; SURFACE CONTACT; SURFACE NITROGEN; TREATMENT PROCESS;

ALUMINUM GALLIUM NITRIDE;

EID: 31744448115     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/2/044     Document Type: Article

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