Barrier height enhancement and stability of the Aun-InP Schottky barrier diodes oxidized by absorbed water vapor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2436-2443

  Cetin H ^a   Ayyildiz, E ^a   Turut A ^b  

^a ERCIYES UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; EVAPORATION; OXIDATION; SEMICONDUCTING INDIUM PHOSPHIDE; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

BARRIER HEIGHT ENHANCEMENT; CONTACT STABILITY; METAL DEPOSITION; WATER VAPOR;

SCHOTTKY BARRIER DIODES;

EID: 29044447956     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2126675     Document Type: Article

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