Inteface-controlled schottky barriers on InP and related materials

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1441-1450

  Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODEPOSITION; FERMI LEVEL; INTERFACES (MATERIALS); SEMICONDUCTING INDIUM PHOSPHIDE;

DISORDER INDUCED GAP STATE (DIGS);

SCHOTTKY BARRIER DIODES;

EID: 0031250544     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00087-7     Document Type: Article

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