Electrical and gated photoluminescence intensity studies on Schottky and oxidized Schottky structures

Thin Solid Films

Volumn 342, Issue 1, 1999, Pages 136-141

  Ahaitouf, A ^a   Bath, A ^b  

^a SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

^b UNIVERSITÉ DE LORRAINE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; OXIDATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

INTERFACIAL OXIDES;

SCHOTTKY BARRIER DIODES;

EID: 0032632667     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01455-2     Document Type: Article

References (26)

1. Rhoderick E.H., Williams R.H. Metal Semiconductor Contact. 2nd :1988;Clarendon, Oxford.
2. Cowley A.M., Sze S.M. J. Appl. Phys. 36:1965;3212.
3. Card H.C., Rhoderick E.H. J. Phys. D. 4:1971;1589.
4. Wu C.Y. J. Appl. Phys. 51:1980;3786.
5. Maeda K., Umezu I., Ikoma H., Yoshimura T. J. Appl. Phys. 68:1990;2858.
6. Tseng H.H., Wu C.Y. J. Appl. Phys. 61:1987;299.
7. Horvàth Z.S.J. J. Appl. Phys. 63:1988;976.
8. Maeda K., Ikoma H., Sato K., Ishida T. Appl. Phys. Lett. 62:1993;2560.
9. Iyer R., Lile D. Appl. Phys. Lett. 60:1992;754.
10. Ochiai M., Sebestyen P., Lile D. Electron. Lett. 29:1993;567.
11. Bath A., Ahaitouf A., Lepley B., Belmahi M., Remy M., Ravelet S. Mater. Sci. Eng. B20:1993;148.
12. D. Gallet, M. Gendry, G. Hollinger, et al., Third International Conference on Indium Phosphide and Related Compounds, Park Hotel, Cardiff , April 8-11, 1991.
13. Ahaitouf A., Bath A., Lepley B. Phys. Status Solidi A. 127:1991;159.
14. Newman N., Kendelewicz T., Bowman L., Spicer W.E. Appl. Phys. Lett. 46:1985;1176.
15. Werner J., Levy A.F.J., Tung R.T., Anzlowar M., Pinto M. Phys. Rev. Lett. 60:1988;53.
16. Chattopadhyay P., Raychaudhuri B. Solid State Electron. 35:1992;875.
17. Poon T.C., Card H.C. J. Appl. Phys. 51:1980;6273.
18. Darling R.B. Phys. Rev. B. 43:1991;4071.
19. Many A., Goldstein Y., Grover N.B. Semicondutor Surfaces. 1965;North-Holland, Amsterdam.
20. Ando K., Yamamoto A., Yamaguchi M. Jpn. J. Appl. Phys. 20:1981;1107.
21. Ando K., Yamaguchi M. Jpn. J. Appl. Phys. 20:1981;1335.
22. Winogradoff N.N. Phys. Rev. 138:1965;A1562.
23. Ahaitouf A., Bath A., Lepley B., Telia A. Phys. Status Solidi A. 156:1996;87.
24. Chang R.R., Iyer R., Lile D. J. Appl. Phys. 61:1987;1995.
25. Casey H., Buehler E. Appl. Phys. Lett. 30:1977;247.
26. Nicollian E.H., Brews J.R. MOS Physics and Technology. 1982;Wiley Interscience, New York.