Antimony and bismuth passivations of InP and characterizations of InP metal-insulator-semiconductor structures fabricated by plasma oxidation of Sb- and Bi-passivated InP

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 1, 2003, Pages 226-233

  Morikita, Shinya ^a,b   Ikoma, Hideaki ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; BISMUTH; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; EVAPORATION; FERMI LEVEL; OXIDATION; PASSIVATION; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE STRUCTURES; VACUUM;

METAL INSULATOR SEMICONDUCTOR STRUCTURES; PLASMA OXIDATION; REVERSE LEAKAGE CURRENT DENSITY; SCHOTTKY BARRIER; SCHOTTKY CURRENT DENSITY VOLTAGE CHARACTERISTICS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0037277256     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1531135     Document Type: Article

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