Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes

Applied Surface Science

Volumn 152, Issue 1, 1999, Pages 57-62

  Ayyildiz, E ^a   Bati, B ^b   Temirci, C ^b   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b YUZUNCU YIL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CHARGE; FERMI LEVEL; INTERFACES (MATERIALS); OPTOELECTRONIC DEVICES; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR METAL BOUNDARIES; THERMAL EFFECTS; TITANIUM;

INTERFACE CHARGE DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 0033312732     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00301-3     Document Type: Article

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