The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth - Study of surface morphology

Diamond and Related Materials

Volumn 16, Issue 2, 2007, Pages 409-411

  Tokuda, Norio ^a   Saito, Takeyasu ^a   Umezawa, Hitoshi ^a   Okushi, Hideyo ^a,b   Yamasaki, Satoshi ^a,b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Boron doping; Homoepitaxy; Morphology; Surface

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; CRYSTALS; EPITAXIAL GROWTH; NUCLEATION; OPTICAL MICROSCOPY; SEMICONDUCTOR GROWTH;

BORON ATOMS; HOMOEPITAXIAL GROWTH; UNEPITAXIAL CRYSTALLITES;

DIAMOND FILMS;

EID: 33846308922     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.08.013     Document Type: Article

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