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Volumn 7, Issue 6, 1998, Pages 874-878
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On the properties of impurity bands generated in P-type homoepitaxial diamond
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Author keywords
Boron doping: Photoconductivity; Electrical conductivity; Homoepitaxy
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Indexed keywords
BAND STRUCTURE;
BORON;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY OF SOLIDS;
EPITAXIAL GROWTH;
PHOTOCONDUCTIVITY;
IMPURITY BANDS;
INDUSTRIAL DIAMONDS;
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EID: 0032092606
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-9635(97)00317-8 Document Type: Article |
Times cited : (6)
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References (23)
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