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Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 956-959

Low-compensated boron-doped homoepitaxial diamond films

(5) Yamanaka, S a,c Takeuchi, D a,c Watanabe, H a,b,c Okushi, H a,c Kajimura, K a,b

a ELECTROTECHNICAL LABORATORY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c WASEDA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; BORON; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); EPITAXIAL GROWTH; FILM GROWTH; HALL EFFECT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR JUNCTIONS;

HOMOEPITAXIAL DIAMOND FILMS; SCHOTTKY JUNCTIONS;

DIAMOND FILMS;

EID: 0033738960 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(99)00212-5 Document Type: Article

Times cited : (40)

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