Homoepitaxial diamond film with an atomically flat surface over a large area

Diamond and Related Materials

Volumn 8, Issue 7, 1999, Pages 1272-1276

  Watanabe, Hideyuki ^a   Takeuchi, Daisuke ^a   Yamanaka, Sadanori ^a   Okushi, Hideyo ^a   Kajimura, Koji ^a   Sekiguchi, Takashi ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Atomically flat surface; Homoepitaxial diamond films; Low methane concentration; Microwave plasma CVD

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; HYDROGEN; METHANE; MICROWAVES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES; SURFACE ROUGHNESS; SURFACES;

ATOMICALLY FLAT SURFACE; HOMOEPITAXIAL DIAMOND FILM; LOW METHANE CONCENTRATION; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 0033164554     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00126-0     Document Type: Article

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