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Volumn 237-239, Issue 1 4II, 2002, Pages 1269-1276

Device-grade homoepitaxial diamond film growth

(5) Okushi, H a,b Watanabe, H a,b Ri, S a Yamanaka, S a,b Takeuchi, D a,b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

A1. Crystal morphology; A3. Chemical vapor deposition process; A3. Homoepitaxial growth; B1. Diamond; B2. Semiconducting materials

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL ORIENTATION; DIAMOND FILMS; ETCHING; FILM GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES; SURFACE STRUCTURE; SYNTHESIS (CHEMICAL);

HOMOEPITAXIAL GROWTH;

EPITAXIAL GROWTH;

EID: 0036531393 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02144-3 Document Type: Article

Times cited : (74)

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