Linewidth enhancement factor in InGaAs quantum-dot amplifiers

IEEE Journal of Quantum Electronics

Volumn 40, Issue 10, 2004, Pages 1423-1429

  Schneider, Stephan ^a   Borri, Paola ^a   Langbein, Wolfgang ^a   Woggon, Ulrike ^a   Sellin, Roman L ^b   Ouyang, D ^c   Bimberg, Dieter ^d  

^a TU DORTMUND UNIVERSITY   (Germany)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRON RESONANCE; ELECTRON TRANSITIONS; GROUND STATE; OPTOELECTRONIC DEVICES; PUMPING (LASER); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

GROUND STATE INTERBAND TRANSITION; INJECTION CURRENTS; LINEWIDTH ENHANCEMENT FACTOR; PHOTON ENERGY; QUANTUM DOT AMPLIFIERS;

SEMICONDUCTOR LASERS;

EID: 5444260105     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.834779     Document Type: Article

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