Optimization and integration of trimethylsilane-based organosilicate glass and organofluorinated silicate glass dielectric thin films for Cu damascene process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 1, 2007, Pages 96-101

  Cheng, Y L ^d   Wang, Y L ^d   Hwang, G J ^a   Lee, W H ^b   O'Neill, M L ^c   Tang, Allen ^c   Wu, C L ^c  

^a NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c AIR PRODUCTS AND CHEMICALS INC   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ASHING DAMAGE; INTERCONNECT STRUCTURE; ORGANOSILICATE GLASSES (OSG);

DEPOSITION; DIELECTRIC FILMS; ELECTROMIGRATION; SILICATES; STRENGTH OF MATERIALS; THIN FILMS;

GLASS;

EID: 34047187604     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2409974     Document Type: Article

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