Analysis of pore and pore-related properties in plasma-enhanced chemical vapor deposition low dielectric constant films

Journal of the Electrochemical Society

Volumn 149, Issue 9, 2002, Pages

  Shioya, Yoshimi ^a   Maeda, Kazuo ^a   Ishimaru, Tomomi ^b   Ohdaira, Toshiyuki ^c   Suzuki, Ryoichi ^c  

^a Semiconductor Process Laboratory   (Japan)

^b CANON INC   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COMPOSITION; DENSITY (OPTICAL); ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; MASS SPECTROMETRY; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PORE SIZE; POSITRON ANNIHILATION SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

BIAS POWER; HYDROGEN FORWARD SPECTROSCPOPY; THERMAL DESORPTION SPECTROSCOPY; X RAY REFLECTIVITY MEASUREMENT;

DIELECTRIC FILMS;

EID: 0036748399     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1494827     Document Type: Article

References (16)

1. M. Mizuno, K. Anjo, Y. Sumi, M. Fukaishi, H. Wakabayashi, T. Mogami, T. Horiuchi, and M. Yamashina, in Proceeding of IEEE 2000 International Interconnect Technology Conference (IITC), pp. 3, IEEE, New York 2000.
2. W. Chang, W. C. Chiou, L. J. Li, L. C. Chao, S. M. Jang, C. H. Yu, and M. S. Liang, in Proceedings of IEEE 2000 International Interconnect Technology Conference (IITC), pp. 79 IEEE, New York (2000).
3. T. Hukada and T. Akahori, in Extended Abstracts of the International Conference on Solid State Devices and Materials, pp. 158, Chiba, Japan, 1993.
4. S. W. Lim, Y. Shimogaki, Y. Nakano, K. Tada, and H. Komiyama, J. Electrochem. Soc., 144, pp. 2531 (1997).
5. A. T. Kohl, R. Mina, R. Shick, L. Rhodes, Z. L. Wang, and D. A. Kohl, Electrochem. Solid-State Lett., 2, pp. 77 (1999).
6. C. Jin and J. Wetzel, in Proceedings of IEEE 2000 International Interconnect Technology Conference (IITC), pp. 99 IEEE, New York (2000).
7. N. H. Hendricks, in Proceedings of Dielectrics for VLSI/ULSI Multilevel Interconnection Conference DUMIC 2000, pp. 17 (2000).
8. M. J. Lobota, J. A. Seifferly, C. M. Grove, and R. E. Schneider, Abstract 358, pp. 454, The Electrochemical Society Meeting Abstracts, Vol. 97-1, Montreal, Quebec, Canada, May 4-9, 1997.
9. Y. Shioya, H. Ikakura, T. Ishimaru, Y. Kotake, Y. Yamamoto, K. Oohira, S. Ohgawara, and K. Maeda, in Proceedings of VLSI Multilevel Interconnection Technology Conference, VMIC 2000, pp. 143 (2000).
10. H. Ikakura, T. Ishimaru, Y. Yamamoto, Y. Kotake, S. Ohgawara, Y. Shioya, K. Ohira, and K. Maeda, in Proceedings of Advanced Metallization Conference, AMC-2000, p. 92 (AMC 2000 Executive Committee, USA (2000).
11. M. Matsuura, in Proceedings of SEMICON Kansai 2000 ULSI Technology Seminar, pp. 2-42 (2000).
12. R. Suzuki, T. Ohdaira, Y. Shioya, and T. Ishimaru, Jpn. J. Appl. Phys., Part 2, 40, L414 (2001).
13. R. Suzuki, T. Ohdaira, and T. Mikado, Phys. Chem., 58, pp. 2470 (2000).
14. M. Erdrup, D. Lightbody, and J. N. Sherwood, Chem. Phys., 63 pp. 51 (1981).
15. H. Nakanishi, S. J. Wang, and Y. C. Jean, in Proceedings of International Conference on Positron Annihilation Studies of Fluids, S. C. Sharma, Editor, pp. 292, World Scientific, Singapore (1987)
16. D. W. Gidley, W. E. Frieze, T. L. Dull, A. F. Yee, E. T. Ryan, and H. M. Ho, Phys. Rev. B, 60, pp. R5157 (1999).