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Journal of the Electrochemical Society

Volumn 151, Issue 4, 2004, Pages

Stability of Carbon-Doped Silicon Oxide Low-K Thin Films

(2) Wang, Y H a Kumar, R a

a INSTITUTE OF MICROELECTRONICS (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA PASSIVATION; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PEVCD) SYSTEM; RESISTANCE-CAPACITANCE (RC) DELAY; ULTRALARGE-SCALE INTEGRATED (ULSI) CIRCUITS;

CAPACITANCE; CARBON; CHEMICAL VAPOR DEPOSITION; DEGRADATION; DIELECTRIC FILMS; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; ISOTHERMS; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS;

THIN FILMS;

EID: 2042535363 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1648026 Document Type: Article

Times cited : (16)

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