Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 681-687

  Cheng, Y L ^a,b   Wang, Y L ^a,c   Wu, Y L ^d   Liu, C P ^f   Liu, C W ^a   Lan, J K ^b   O'Neil, M L ^e   Ay, Chyung ^c   Feng, M S ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^d NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^e AIR PRODUCTS AND CHEMICALS INC   (United States)

^f NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Heat resistance; Low dielectric constant (low k); Moisture resistance; Organo silicate glass

Indexed keywords

CHEMICAL BONDS; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; HYDROLYSIS; LEAKAGE CURRENTS; MOISTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELIABILITY; SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

MOISTURE RESISTANCE; SILOXANES;

DIELECTRIC MATERIALS;

EID: 1342323628     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.09.006     Document Type: Conference Paper

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