Neutron irradiation effects in AlGaN/GaN heterojunctions

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 523-526

  Polyakov, A Y ^a,b   Smirnov, N B ^b   Govorkov, A V ^b   Markov, A V ^b   Pearton, S J ^c   Kolin, N G ^d   Merkurisov, D I ^d   Boiko, V M ^d   Skowronski, M ^a   Lee, I H ^e  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c UNIVERSITY OF FLORIDA   (United States)

^d Federal State Unitary Enterprise   (Russian Federation)

^e Chonbuk National University   (South Korea)

Author keywords

AlGaN GaN heterojunctions; Deep traps; Irradiation

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON SCATTERING; HETEROJUNCTIONS; NEUTRON IRRADIATION;

ALGAN/GAN HETEROJUNCTIONS; DEEP TRAPS; NEUTRON IRRADIATION EFFECTS;

GALLIUM NITRIDE;

EID: 33645220399     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.133     Document Type: Conference Paper

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