TiN/Ta2O5/PE-SiN/TiN metal-insulator-metal capacitor for radio frequency and mixed signal integrated circuit applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 4, 2005, Pages 764-767

  Chung, Y S ^a   Kim, K S ^a   Ryu, Y S ^a   Lee, D ^a   Hwang, S B ^a   Shin, C S ^a   Park, S K ^a   Lee, J G ^a  

^a MagnaChip Semiconductor Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIFFUSION; LEAKAGE CURRENTS; TITANIUM COMPOUNDS;

CAPACITANCE DENSITY; ENERGY BARRIERS; LAMINATED STRUCTURE;

MIM DEVICES;

EID: 31044443305     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1864055     Document Type: Conference Paper

References (6)

1. Hang Hu et al., IEEE Electron Device Lett. 23, 514 (2002).
2. C. H. Huang et al., IEEE MTT-S Int. Microwave Symp. Dig. 507 (2003).
3. Tsuyoshi Ishikawa et al., International Electron Devices Meeting, Digest (2002), pp. 940-942.
4. Sun Jung Kim, Symposium on VLSI Technology Digest of Technical Papers (2003), pp. 77-78.
5. Seok-Jun Won et al., Symposium on VLSI Technology, Digest of Technical Papers (2003), pp. 23-24.
6. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New York, 1981), pp. 402-405.