The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

Journal of Physics D: Applied Physics

Volumn 40, Issue 3, 2007, Pages 765-768

  Wang, B Z ^a   Wang, X L ^a   Wang, X Y ^a   Guo, L C ^a   Wang, X H ^a   Xiao, H L ^a   Liu, H X ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CATHODOLUMINESCENCE; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION;

OPTICAL QUALITY; PLASMA EXCITED MOLECULAR BEAM EPITAXY; QUATERNARY ALLOYS;

INDIUM ALLOYS;

EID: 33947651632     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/3/012     Document Type: Article

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