Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

Solid-State Electronics

Volumn 49, Issue 8, 2005, Pages 1387-1390

  Wang, X L ^a   Wang, C M ^a   Hu, G X ^a   Wang, J X ^a   Chen, T S ^b   Jiao, G ^b   Li, J P ^a   Zeng, Y P ^a   Li, J M ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NANJING ELECTRONIC DEVICES INSTITUTE   (China)

Author keywords

GaN; HEMT; MOCVD; Power device

Indexed keywords

ELECTRON GAS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSCILLATIONS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; TRANSCONDUCTANCE;

CUTOFF FREQUENCY; GAN; OSCILLATION FREQUENCY; POWER DEVICE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 24144465873     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.06.022     Document Type: Article

References (10)

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