Novel quaternary AlInGaN/GaN heterostructure field effect transistors on sapphire substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 7, 2006, Pages 5728-5731

  Liu, Yang ^a   Egawa, Takashi ^a   Jiang, Hao ^a   Zhang, Baijun ^a   Ishikawa, Hiroyasu ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AllnGaN; Breakdown voltage; HFET; Normally off; Piezoelectric polarization; Quaternary; Spontaneous polarization; Two dimensional electron gas

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRON GAS; SAPPHIRE; SUBSTRATES; TRANSCONDUCTANCE;

ALLNGAN; HFET; NORMALLY-OFF; PIEZOELECTRIC POLARIZATION; QUATERNARY; SPONTANEOUS POLARIZATION; TWO-DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 33746840552     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5728     Document Type: Article

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