Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers

Journal of Crystal Growth

Volumn 267, Issue 1-2, 2004, Pages 67-73

  Cho, Hyung Koun ^a   Lee, Kyu Han ^b   Kim, Sun Woon ^b   Park, Keun Seop ^b   Cho, Yong Hoon ^c   Lee, Jun Hee ^a  

^a Dong A University   (South Korea)

^b Optronix Inc   (South Korea)

^c Chungbuk National University   (South Korea)

Author keywords

A1. Defects; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Light emitting diodes

Indexed keywords

BAND STRUCTURE; CRYSTAL MICROSTRUCTURE; GALLIUM NITRIDE; INDIUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PITTING; PRESSURE EFFECTS; SHAPE MEMORY EFFECT; THERMAL EFFECTS;

BROAD DEEP LEVEL EMISSION; QUATERNARY EPILAYERS; REACTOR PRESSURE;

CRYSTAL GROWTH;

EID: 2942576482     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.03.061     Document Type: Article

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