Room temperature mobility above 2100 cm2/Vs in Al 0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD

Physica Status Solidi C: Conferences

Volumn 3, Issue 3, 2006, Pages 607-610

  Wang, Xiaoliang ^a   Wang, Cuimel ^a   Hu, Guoxin ^a   Wang, Junxi ^a   Li, Jianping ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DEFECTS; ELECTRON GAS; GALLIUM NITRIDE; HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ALUMINUM; GALLIUM; SAPPHIRE;

SHEET RESISTANCE; TWO-DIMENSIONAL ELECTRON GAS (2DEG); V-SHAPED DEFECTS;

SEMICONDUCTING ALUMINUM COMPOUNDS; GALLIUM ALLOYS;

HIGH MOBILITY; ROOM TEMPERATURE; ROOM TEMPERATURE MOBILITY; SAPPHIRE SUBSTRATES; TWO-DIMENSIONAL ELECTRON GAS (2DEG); V-SHAPED DEFECTS;

EID: 33646196420     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564130     Document Type: Conference Paper

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