Characteristics of AlGaN/GaN HEMTs grown by plasma-assisted molecular beam epitaxy

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 2, 2004, Pages 121-125

  Wang, Xiaoliang ^a   Hu, Guoxin ^a   Wang, Junxi ^a   Liu, Xinyu ^b   Liu, Jian ^b   Liu, Hongxin ^a   Sun, Dianzhao ^a   Zeng, Yiping ^a   Qian, He ^b   Li, Jinmin ^a   Kong, Meiying ^a   Lin, Lanying ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

FET; GaN; HEMT; RF MBE

Indexed keywords

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; TRANSCONDUCTANCE;

MAXIMUM SATURATION DRAIN CURRENT DENSITY; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SHEET ELECTRON DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2942676873     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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