The influence of the H2/Ar ratio on surface morphology and structural defects in homoepitaxial 4H-SiC films grown with methyltrichlorosilane

Journal of Applied Physics

Volumn 101, Issue 5, 2007, Pages

  Lu, P ^a   Edgar, J H ^a  

^a Kansas State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FILM GROWTH; FILMS; SILICON CARBIDE; SURFACE MORPHOLOGY; SURFACE ROUGHNESS;

BASAL PLANE DISLOCATIONS; CARRIER GASES; GRAPHITE HEATERS; METHYLTRICHLOROSILANE;

HYDROGEN INORGANIC COMPOUNDS;

EID: 33947328386     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435066     Document Type: Article

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