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Volumn 457-460, Issue I, 2004, Pages 221-224

Growth of homoepitaxial films on 4H-SiC(1120) and 8° off-axis 4H-SiC(0001) substrates and their characterization

(10) Bishop, S M a Preble, E A a Hallin, C b Henry, A b Storasta, L b Jacobson, H b Wagner, B P a Reitmeier, Z J a Janzen E b Davis, R F a

a NORTH CAROLINA STATE UNIVERSITY (United States)

b LINKÖPING UNIVERSITY (Sweden)

Author keywords

A plane; Carrier concentration; Etching; Films; Mobility; Photoluminescence; SiC; Wafers; X ray rocking curves

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); EPITAXIAL GROWTH; ETCHING; EXCITONS; MICROSTRUCTURE; PHOTOLUMINESCENCE; SILICON WAFERS;

A-PLANE; FREE EXCITON (FE); FULL-WIDTH AT HALF MAXIMA (FWHM); X-RAY ROCKING CURVES;

SILICON CARBIDE;

EID: 8744228029 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (3)

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