Homoepitaxial growth of 4H- and 6H-SiC in a commercial horizontal LPCVD reactor

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 127-130

  Wischmeyer, F ^a   Leidich, D ^a   Niemann, E ^a  

^a DAIMLER AG   (Germany)

Author keywords

Atomic Force Microscopy; CVD; Electrical Characterization; Homoepitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

COLD WALL REACTOR; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); SUBSTRATE PREPARATION TECHNIQUES;

SILICON CARBIDE;

EID: 0031701623     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.127     Document Type: Article

References (5)

1. M. Bhatnagar, B.J. Baliga, IEEE Trans. Electron Devices 40 (1993), p. 645
2. F. Schulte, G. Strauch, H. Jürgensen, E. Niemann, D. Leidich, Transactions "2nd High Temperature Electronics Conf.", Charlotte (June 1994), 1, X-3
3. F. Owman, C. Hallin, P. Mårtenson, E. Janzén, J. Crystal Growth 167 (1996), p. 391
4. A.A. Burk Jr., L.B. Rowland, J. Crystal Growth 167 (1996), p.586
5. D.J. Larkin, P.G. Neudeck, J.A. Powell, L.G. Matus, Appl. Phys. Lett. 65 (1994), p.37