An analytic method to determine GaAs FET parasitic inductances and drain resistance under active bias conditions

IEEE Transactions on Microwave Theory and Techniques

Volumn 49, Issue 7, 2001, Pages 1241-1247

  Campbell, C F ^a   Brown, S A ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

FET equivalent circuit; Parameter extraction; Semiconductor device modeling; Small signal model

Indexed keywords

DRAIN RESISTANCE; PARAMETER-EXTRACTION; STATISTICAL PROCESS TRACKING;

ELECTRIC RESISTANCE; ELECTRONIC CIRCUIT TRACKING; GATES (TRANSISTOR); INDUCTANCE; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS;

FIELD EFFECT TRANSISTORS;

EID: 0035394387     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.932242     Document Type: Article

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