At bias extraction of parasitic source and drain resistances in AlGaN/GaN HFETs: Bias dependence and implications for device modelling and physics

Physica Status Solidi C: Conferences

Volumn 3, Issue 3, 2006, Pages 478-481

  DiSanto, D W ^a   Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON VELOCITY ANALYZERS; GALLIUM NITRIDE; HETEROJUNCTIONS; NETWORKS (CIRCUITS); ELECTRIC CURRENT MEASUREMENT; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; SCATTERING PARAMETERS;

GATE-DRAIN ACCESS REGION; HETEROJUNCTION FIELD-EFFECT TRANSISTORS (HFET); PARASITIC RESISTANCES; VIRTUAL GATE HYPOTHESIS;

FIELD EFFECT TRANSISTORS; EXTRACTION;

CIRCUIT PARAMETER; DRAIN RESISTANCES; ELECTRON VELOCITY; PARASITIC RESISTANCES; RESISTANCE MODULATION; S-PARAMETER MEASUREMENTS; SOURCE AND DRAIN RESISTANCE; SOURCE RESISTANCE;

EID: 33646198168     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200564108     Document Type: Conference Paper

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