Direct determination of the bias-dependent series parasitic elements in SiC MESFETs

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 2 I, 2003, Pages 597-600

  Manohar, S ^a   Pham, A ^a   Evers, Nicole ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

Direct extraction; MESFET; SiC; Small signal model

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; NETWORKS (CIRCUITS); SILICON CARBIDE;

SMALL-SIGNAL MODELS;

MESFET DEVICES;

EID: 0037291094     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.807841     Document Type: Article

References (12)

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