Determination of stress profile and optimization of stress gradient in PECVD poly-SiGe films

Sensors and Actuators, A: Physical

Volumn 118, Issue 2, 2005, Pages 313-321

  Molfese, Antonio ^a   Mehta, Anshu ^b   Witvrouw, Ann ^b  

^a CNR   (Italy)

^b IMEC   (Belgium)

Author keywords

Cantilevers; Poly SiGe; Stress gradient; Stress profile; Zero stress gradient

Indexed keywords

APPROXIMATION THEORY; BENDING (DEFORMATION); CANTILEVER BEAMS; CMOS INTEGRATED CIRCUITS; ELASTIC MODULI; INTEGRAL EQUATIONS; MICROELECTROMECHANICAL DEVICES; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SILICON COMPOUNDS; STRESS ANALYSIS; THIN FILMS;

CANTILEVERS; POLY-SIGE; STRESS GRADIENT; STRESS PROFILE; ZERO-STRESS GRADIENT;

POLYSILICON;

EID: 13244277754     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.08.021     Document Type: Article

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