Processing of MEMS gyroscopes on top of CMOS ICs

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 48, Issue , 2005, Pages 88-89

  Witvrouw, A ^a   Mehta, A ^a   Verbist, A ^a   Du Bois, B ^a   Van Aerde, S ^b   Ramos Martos, J ^c   Ceballos, J ^c   Ragel, A ^c   Mora, J M ^c   Lagos, M A ^c   Arias, A ^c   Hinojosa, J M ^c   Spengler, J ^d   Leinenbach, C ^e   Fuchs, T ^e   Kronmuller S ^e  

^a IMEC   (Belgium)

^b ASM   (Belgium)

^c INSTITUTO DE MICROELECTRÓNICA DE SEVILLA   (Spain)

^d PHILIPS RESEARCH LABORATORIES   (Germany)

^e ROBERT BOSCH GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27544458906     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. A.E. Franke et al., "Polycrystalline Silicon-Germanium Films for Integrated Microsystems," IEEE J. MEMS, vol. 12, no. 2, pp. 160-171, 2003.
3. A. Witvrouw et al., "Why CMOS-Integrated Transdures? A Review," Microsystem Technologies," vol. 6 (5), pp. 192-199, 2000.
4. J. Smith et al., "Embedded Micromechanical Devices for the Monolithic Integration of MEMS with CMOS," Proc. IEDM, pp. 609-612, 1995.
5. W. Kuehnel and S. Sherman, "A Surface Micromachined Silicon Accelerometer with On-Chip Detection Circuitry," Sensors and Actuators A: Physical, vol. 45, no. 1, pp. 7-16, 1994.
6. S. Sedky et al., "Poly SiGe, a Promising Material for MEMS Monolithic Integration with the Driving Electronics," Sensors and Actuators A: Physical, vols. 97-98, pp. 503-511, 2002.
7. T. J. King et al., "Recent Progress in Modularly Integrated MEMS Technologies," Proc. IEDM, pp. 199-202, 2002.
8. A. Mehta et al., "Novel High Growth Rate Processes for Depositing Poly-SiGe Structural Layers at CMOS Compatible Temperatures," Proc. IEEE Int. Conf. MEMS, pp. 721-724, 2004.
9. C. Rusu et al., "New Low-Stress PECVD Poly-SiGe Layers For MEMS," IEEE J. MEMS, vol. 12, no. 6, pp. 816-825, 2003.