Optimization of poly-SiGe deposition processes for modular MEMS integration

Materials Research Society Symposium - Proceedings

Volumn 782, Issue , 2003, Pages 43-48

  Lin, Blake C Y ^a   King, Tsu Jae ^a   Howe, Roger T ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COPPER; POLYSILICON; SILICON COMPOUNDS; TENSILE STRESS; THIN FILMS;

COMPRESSIVE AVERAGE STRESS; STRESS GRADIENTS; THERMAL BUDGET;

MICROELECTROMECHANICAL DEVICES;

EID: 2942679546     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-782-a2.4     Document Type: Conference Paper

References (6)

1. A. E. Franke, J. M. Heck, T.-J. King, and R. T. Howe, "Polycrystalline silicon-germanium films for integrated microsystems," Journal of Microelectromechanical Systems, Vol. 12, pp. 160-171, 2003.
2. S. A. Bhave, B. L. Bircumshaw, W. Z. Low, Y.-S. Kim, A. P. Pisano, T.-J. King, and R. T. Howe, "Poly-SiGe: a high-Q structural material for post-CMOS integrated RF MEMS," Solid-State Sensor, Actuator, and Microsystems Workshop (Hilton Head 2002), Hilton Head Island, SC, pp. 34-37, 2002.
3. A. E. Franke, Ph.D. Dissertation, Dept. of EECS, Univ. of California at Berkeley, Dec. 2000.
4. J. M. Heck, Ph.D. Dissertation, Appl. Sci. and Tech., Univ. of California at Berkeley, May 2001.
5. M. Wasilik, "Silicon-germanium film deposition characteristics in Tystar 20," presented at the Industrial Advisory Board, (Berkeley Sensor & Actuator Center), Berkeley, CA, Sept. 2002.
6. J. Yang, H. Kahn, A.-Q. He, S. M. Phillips, and A. H. Heuer, "A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process," Journal of Microelectromechanical Systems, Vol. 9, pp. 485-493, 2000.